Display panel with bypass line connected to metal layer adjacent to transmission area

ABSTRACT

A display panel includes: a first substrate including a transmission area, a display area arranged to at least partially surround the transmission area, and a first non-display area arranged between the transmission area and the display area; display elements arranged in the display area; a first bypass line arranged in the first non-display area and arranged to bypass the transmission area; a second substrate arranged to face the first substrate; a sealing member joining the first substrate to the second substrate and surrounding the periphery of the transmission area; and a metal layer arranged in the first non-display area and arranged more adjacent to the transmission area than the first bypass line, wherein the metal layer is arranged in a different layer than the first bypass line and is electrically connected to the first bypass line.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2019-0113521, filed on Sep. 16, 2019, in the KoreanIntellectual Property Office, the entire content of which isincorporated herein by reference.

BACKGROUND 1. Field

One or more embodiments relate to display panels.

2. Description of Related Art

Recently, display apparatuses have been used for various purposes. Also,as display apparatuses have become thinner and lighter, their range ofuse has widened.

Because display apparatuses are being used in various ways, variousmethods may be utilized to design the shapes of display apparatuses, andfurther, more and more functions may be combined and/or associated withdisplay apparatuses.

SUMMARY

One or more aspects of embodiments of the present disclosure aredirected toward a display panel including a transmission area in whichcameras, sensors, and/or the like may be arranged inside a display area,as a method of increasing functions that may be combined and/orassociated with display apparatuses.

However, the scope of the present disclosure is not limited thereto.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments of the disclosure.

According to one or more embodiments, a display panel includes a firstsubstrate including a transmission area, a display area at leastpartially surrounding the transmission area, and a first non-displayarea between the transmission area and the display area, displayelements in the display area, a first bypass line in the firstnon-display area, to detour the transmission area, a second substratefacing the first substrate, a sealing member joining the first substrateto the second substrate and surrounding the periphery of thetransmission area, and a metal layer in the first non-display area andbeing more adjacent to the transmission area than the first bypass line,wherein the metal layer is in a different layer than the first bypassline and is electrically connected to the first bypass line.

In an embodiment, the display panel may further include a second bypassline in the first non-display area and to detour the transmission area,wherein the second bypass line may be arranged in a same layer as themetal layer.

In an embodiment, the first bypass line and the second bypass line mayintersect or cross each other.

In an embodiment, the first bypass line may include a connection portionprotruding toward a center of the transmission area, and the metal layermay be connected to the connection portion through a contact hole.

In an embodiment, the connection portion may be a plurality ofconnection portions.

In an embodiment, the first bypass line may be a portion of an electrodevoltage line to provide a driving voltage to the display area.

In an embodiment, the first bypass line may extend from one electrode ofa storage capacitor in the display area.

In an embodiment, the metal layer and the sealing member may surroundthe transmission area in a ring shape, and an inner diameter of thesealing member may be smaller than an inner diameter of the metal layer.

In an embodiment, the metal layer and the sealing member may surroundthe transmission area in a ring shape, and an outer diameter of thesealing member may be equal to an outer diameter of the metal layer.

In an embodiment, the display panel may further include a touchscreenlayer over the second substrate, wherein the touchscreen layer mayinclude a hole corresponding to the transmission area.

According to one or more embodiments, a display panel includes a firstsubstrate including a first through hole, display elements on the firstsubstrate and at least partially surrounding the first through hole, afirst bypass line bent and extending along an edge of the first throughhole, a second substrate facing the first substrate, a first sealingmember joining the first substrate to the second substrate andsurrounding a periphery of the first through hole, and a metal layerunder the first sealing member and to surround the first through hole,wherein the metal layer is in a different layer than the first bypassline and is electrically connected to the first bypass line.

In an embodiment, a storage capacitor including a first storagecapacitor plate and a second storage capacitor plate over the firststorage capacitor plate may be arranged over the first substrate, andthe first bypass line may be in a same layer as the second storagecapacitor plate.

In an embodiment, the second storage capacitor plate may be connected toa driving voltage line through a contact hole, and the metal layer maybe in a same layer as the driving voltage line.

In an embodiment, a first driving voltage line and a second drivingvoltage line spaced apart from each other with the first through holetherebetween may be arranged over the first substrate.

In an embodiment, a width of the first sealing member may be greaterthan a width of the metal layer.

In an embodiment, the display panel may further include a second sealingmember joining the first substrate to the second substrate andsurrounding an edge of the first substrate, wherein a width of thesecond sealing member may be greater than a width of the first sealingmember.

In an embodiment, the second substrate may include a second through holecorresponding to the first through hole.

In an embodiment, the first bypass line may include a connection portionprotruding toward the center of the transmission area, and the metallayer may be connected to the connection portion through a contact hole.

In an embodiment, the connection portion may be a plurality ofconnection portions.

In an embodiment, the metal layer may include a plurality of throughholes.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certainembodiments of the disclosure will become more apparent from thefollowing description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1A is a schematic plan view of a display panel according to anembodiment;

FIG. 1B is a schematic cross-sectional view of the display panel takenalong line I-I′ of FIG. 1A;

FIGS. 2A and 2B are equivalent circuit diagrams of pixels according toone or more embodiments;

FIG. 3 is a planar layout diagram of a pixel circuit according to one ormore of the present embodiments;

FIG. 4 is a plan view schematically illustrating arrangements of some ofthe lines around a transmission area according to an embodiment;

FIG. 5A is a plan view illustrating the relationship between a firstsealing member and a metal layer among components around a transmissionarea;

FIG. 5B is an enlarged view of region III of FIG. 4 ;

FIG. 6 is a schematic cross-sectional view of the display panel takenalong line II-II′ of FIG. 4 ;

FIG. 7 is a schematic plan view illustrating the shape of a metal layeraccording to some embodiments;

FIG. 8 is a cross-sectional view schematically illustrating a displaypanel according to some embodiments; and

FIG. 9 is a cross-sectional view schematically illustrating a displaypanel according to some embodiments.

DETAILED DESCRIPTION

Reference will now be made in more detail to embodiments, examples ofwhich are illustrated in the accompanying drawings, wherein likereference numerals refer to like elements throughout. In this regard,the present embodiments may have different forms and should not beconstrued as being limited to the descriptions set forth herein.Accordingly, the embodiments are merely described below, by referring tothe figures, to explain aspects of the present description. As usedherein, the term “and/or” includes any and all combinations of one ormore of the associated listed items. Throughout the disclosure, theexpression “at least one of a, b or c” indicates only a, only b, only c,both a and b, both a and c, both b and c, all of a, b, and c, orvariations thereof. Expressions such as “at least one of,” “one of,” and“selected from,” when preceding a list of elements, modify the entirelist of elements and do not modify the individual elements of the list.Further, the use of “may” when describing embodiments of the presentinvention refers to “one or more embodiments of the present invention.”

Hereinafter, embodiments of the present disclosure will be described inmore detail with reference to the accompanying drawings, and in thefollowing description, like reference numerals will denote likeelements, and redundant descriptions thereof will not be provided.

It will be understood that although terms such as “first” and “second”may be used herein to describe various components, these componentsshould not be limited by these terms and these terms are only used todistinguish one component from another component.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be understood that terms such as “comprise,” “include,” and“have” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components.

It will be understood that when a layer, region, or component isreferred to as being “on” another layer, region, or component, it may be“directly on” the other layer, region, or component (without anyintervening layers, regions, or components therebetween) or may be“indirectly on” the other layer, region, or component with one or moreintervening layers, regions, or components therebetween.

Sizes of components in the drawings may be exaggerated for convenienceof description. In other words, because the sizes and thicknesses ofcomponents in the drawings are arbitrarily illustrated for convenienceof description, the present disclosure is not limited thereto.

When a certain embodiment may be implemented differently, a particularprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

It will be understood that when a layer, region, or component isreferred to as being “connected to” another layer, region, or component,it may be “directly connected to” the other layer, region, or component(without any intervening layers, regions, or components therebetween) ormay be “indirectly connected to” the other layer, region, or componentwith one or more intervening layers, regions, or componentstherebetween. For example, it will be understood that when a layer,region, or component is referred to as being “electrically connected to”another layer, region, or component, it may be “directly electricallyconnected to” the other layer, region, or component (without anyintervening layers, regions, or components therebetween) or may be“indirectly electrically connected to” the other layer, region, orcomponent with one or more intervening layers, regions, or componentstherebetween.

FIG. 1A is a schematic plan view of a display panel according to anembodiment, and FIG. 1B is a schematic cross-sectional view of thedisplay panel taken along a line I-I′ of FIG. 1A.

Referring to FIGS. 1A and 1B, the display panel may include a firstsubstrate 110 where a display portion 10 is arranged, and a secondsubstrate 310 arranged to face the first substrate 110. The firstsubstrate 110 and the second substrate 310 may be sealed by a sealingmember 500.

The first substrate 110 and the second substrate 310 may include varioussuitable materials such as glass materials, ceramic materials, plasticmaterials, and/or metal materials having SiO₂ as a main component.

The first substrate 110 may include a display area DA and a transmissionarea TA at least partially surrounded by the display area DA. Also, thefirst substrate 110 may include a first non-display area NDA1 arrangedbetween the display area DA and the transmission area TA, and a secondnon-display area NDA2 outside the display area DA.

The display portion 10, including pixels P including one or more displayelements such as organic light-emitting diodes (OLEDs), may be arrangedin the display area DA of the first substrate 110. The pixels P mayinclude a plurality of pixels P, and the plurality of pixels P may bearranged in various suitable forms such as stripe arrangement, pentilearrangement, and/or mosaic arrangement to implement an image. Each pixelP may emit, for example, red, green, blue, or white light through thedisplay element. The pixel P may be understood as a subpixel emittinglight of any one color selected from red, green, blue, and white.

The transmission area TA may be a position where an electronic element20 is arranged. The transmission area TA may be an area through whichlight and/or sound output from the electronic element 20 to the outside,and/or propagating from the outside toward the electronic element 20,may be transmitted. Although one transmission area TA is illustrated inFIG. 1A, a plurality of transmission areas TA may be provided. Also, theshape, size, and position of the transmission area TA may be variouslysuitably modified.

The transmission area TA may be at least partially surrounded by thedisplay area DA. In some embodiments, as illustrated in FIG. 1A, thetransmission area TA may be entirely surrounded by the display area DAincluding the display elements. In other embodiments, the transmissionarea TA may be arranged between the display area DA and the secondnon-display area NDA2, and in this case, the transmission area TA may bepartially surrounded by the display elements.

In the present embodiment, the first substrate 110 may include a firstthrough hole 110H corresponding to the transmission area TA. Also, thesecond substrate 310 may include a second through hole 310Hcorresponding to the first through hole 110H of the first substrate 110.

The first non-display area NDA1 may be arranged between the transmissionarea TA and the display area DA. The first non-display area NDA1 may bearranged to surround the transmission area TA. In the first non-displayarea NDA1, pixels for implementing an image may not be arranged, andlines may be arranged to transmit electrical signals to pixels spacedapart from each other with the transmission area TA therebetween.

The second non-display area NDA2 may be arranged to extend along theedge of the display panel to surround the display area DA. In the secondnon-display area NDA2, pixels for implementing an image may not bearranged, and various lines, an internal circuit portion, a drivingcircuit portion 150, and/or the like may be arranged.

In some embodiments, a terminal portion 140 may be arranged at one sideof the second non-display area NDA2. The terminal portion 140 may beexposed, without being covered by an insulating layer, to beelectrically connected to a printed circuit board PCB. A terminal PCB-Pof the printed circuit board PCB may be electrically connected to theterminal portion 140 of the display panel. The printed circuit board PCBmay be configured to transmit power or signals of a controller 160 tothe display panel.

The pixels P arranged in the display area DA may be connected to theinternal circuit portion, the driving circuit portion 150, and the linesarranged in the second non-display area NDA2, to receive a drivingvoltage and an electrical signal.

The sealing member 500 may include a first sealing member 510 and asecond sealing member 520. The sealing member 500 may bond the firstsubstrate 110 and the second substrate 310 to each other to prevent orreduce oxygen, moisture, and/or the like from flowing into the displayportion 10, and to improve a mechanical strength thereof.

The first sealing member 510 may be arranged in the first non-displayarea NDA1 to surround the transmission area TA. The second sealingmember 520 may be arranged in the second non-display area NDA2 and maybe continuously arranged along the edge of the display area DA. In someembodiments, in order to reduce the area of the first non-display areaNDA1, a width SW1 of the first sealing member 510 may be smaller than awidth SW2 of the second sealing member 520.

The first sealing member 510 and the second sealing member 520 may eachindependently include an inorganic material and may include, forexample, a frit. The first sealing member 510 and the second sealingmember 520 may be applied and formed by a dispenser and/or a screenprinting method. A frit may sometimes refer to a powder-form glass rawmaterial, however, in the present disclosure, the frit may also refer toa paste form in which a laser or infrared absorber, an organic binder, afiller for reducing a thermal expansion coefficient, and/or the like areincluded in a main material such as SiO₂. The paste-form frit may becured by removing the organic binder and moisture through a drying orfiring process. The laser or infrared absorber may include a transitionmetal compound. Laser light may be used as a heat source for curing thefirst sealing member 510 and the second sealing member 520 to bond thefirst substrate 110 and the second substrate 310 together.

Hereinafter, a display panel including an organic light-emitting diodeas a display element will be described for convenience. However,embodiments of the present disclosure may also be applied to varioussuitable types (or kinds) of display panels such as inorganic EL displaypanels, quantum dot display panels, and/or liquid crystal display panelsand display apparatuses including the same.

FIGS. 2A and 2B are equivalent circuit diagrams of pixels according toone or more embodiments of the present disclosure.

Referring to FIG. 2A, each pixel P may include a pixel circuit PC and anorganic light-emitting diode OLED connected to the pixel circuit PC. Thepixel circuit PC may include a driving thin film transistor T1, aswitching thin film transistor T2, and a storage capacitor Cst.

The switching thin film transistor T2 may be connected to a scan line SLand a data line DL and may be configured to transmit a data voltageinput from the data line DL to the driving thin film transistor T1according to a switching voltage input from the scan line SL. Thestorage capacitor Cst may be connected to the switching thin filmtransistor T2, and a driving voltage line PL and may store a voltagecorresponding to the difference between a voltage received from theswitching thin film transistor T2 and a driving voltage ELVDD suppliedto the driving voltage line PL.

The driving thin film transistor T1 may be connected to the drivingvoltage line PL and the storage capacitor Cst and may control a drivingcurrent flowing from the driving voltage line PL through (to) theorganic light-emitting diode OLED in response to a voltage value storedin the storage capacitor Cst. The organic light-emitting diode OLED mayemit light with a certain brightness corresponding to the drivingcurrent. An opposite electrode (e.g., a cathode) of the organiclight-emitting diode OLED may receive a common voltage ELVSS.

Although FIG. 2A illustrates that the pixel circuit PC includes two thinfilm transistors and one storage capacitor, the present disclosure isnot limited thereto. The number of thin film transistors and the numberof storage capacitors may be modified according to the design of thepixel circuit PC.

Referring to FIG. 2B, the pixel circuit PC may include a plurality ofthin film transistors and a storage capacitor. The thin film transistorsand the storage capacitor may be connected to signal lines SL, SIL, EL,and DL, an initialization voltage line VL, and a driving voltage linePL.

Although FIG. 2B illustrates that each pixel P is connected to thesignal lines SL, SIL, EL, and DL, the initialization voltage line VL,and the driving voltage line PL, the present disclosure is not limitedthereto. In other embodiments, at least one of the signal lines SL, SIL,EL, and DL, the initialization voltage line VL, the driving voltage linePL, and/or the like may be shared by adjacent pixels.

The plurality of thin film transistors may include a driving thin filmtransistor T1, a switching thin film transistor T2, a compensation thinfilm transistor T3, a first initialization thin film transistor T4, anoperation control thin film transistor T5, an emission control thin filmtransistor T6, and a second initialization thin film transistor T7.

The signal lines may include a scan line SL configured to transmit ascan signal Sn; a previous scan line SIL transmitting a previous scansignal Sn−1 to the first initialization thin film transistor T4 and thesecond initialization thin film transistor T7; an emission control lineEL transmitting an emission control signal En to the operation controlthin film transistor T5 and the emission control thin film transistorT6, and a data line DL intersecting or crossing the scan line SL andtransmitting a data signal Dm. The driving voltage line PL may beconfigured to transmit the driving voltage ELVDD to the driving thinfilm transistor T1, and the initialization voltage line VL may transmitan initialization voltage Vint for initializing the driving thin filmtransistor T1 and a pixel electrode.

A driving gate electrode G1 of the driving thin film transistor T1 maybe connected to a first storage capacitor plate CE1 of the storagecapacitor Cst, a driving source electrode S1 of the driving thin filmtransistor T1 may be electrically connected to the driving voltage linePL via the operation control thin film transistor T5, and a drivingdrain electrode D1 of the driving thin film transistor T1 may beelectrically connected to the pixel electrode of the organiclight-emitting diode OLED via the emission control thin film transistorT6. The driving thin film transistor T1 may receive the data signal Dmaccording to a switching operation of the switching thin film transistorT2 and supply a driving current IDLED to the organic light-emittingdiode OLED.

A switching gate electrode G2 of the switching thin film transistor T2may be connected to the scan line SL, a switching source electrode S2 ofthe switching thin film transistor T2 may be connected to the data lineDL, and a switching drain electrode D2 of the switching thin filmtransistor T2 may be connected to the driving source electrode S1 of thedriving thin film transistor T1 and connected to the driving voltageline PL via the operation control thin film transistor T5. The switchingthin film transistor T2 may be turned on according to the scan signal Snreceived through the scan line SL, to perform a switching operation oftransmitting the data signal Dm (transmitted to the data line DL) to thesource electrode S1 of the driving thin film transistor T1.

A compensation gate electrode G3 of the compensation thin filmtransistor T3 may be connected to the scan line SL, a compensationsource electrode S3 of the compensation thin film transistor T3 may beconnected to the driving drain electrode D1 of the driving thin filmtransistor T1 and connected to the pixel electrode of the organiclight-emitting diode OLED via the emission control thin film transistorT6, and a compensation drain electrode D3 of the compensation thin filmtransistor T3 may be connected to the first storage capacitor plate CE1of the storage capacitor Cst, the first initialization drain electrodeD4 of the first initialization thin film transistor T4, and the drivinggate electrode G1 of the driving thin film transistor T1. Thecompensation thin film transistor T3 may be turned on according to thescan signal Sn received through the scan line SL, to electricallyconnect the driving gate electrode G1 and the driving drain electrode D1of the driving thin film transistor T1, to thereby diode-connect thedriving thin film transistor T1.

A first initialization gate electrode G4 of the first initializationthin film transistor T4 may be connected to the previous scan line SIL,a first initialization source electrode S4 of the first initializationthin film transistor T4 may be connected to a second initializationdrain electrode D7 of the second initialization thin film transistor T7and the initialization voltage line VL, and a first initialization drainelectrode D4 of the first initialization thin film transistor T4 may beconnected to the first storage capacitor plate CE1 of the storagecapacitor Cst, the compensation drain electrode D3 of the compensationthin film transistor T3, and the driving gate electrode G1 of thedriving thin film transistor T1. The first initialization thin filmtransistor T4 may be turned on according to the previous scan signalSn−1 received through the previous scan line SIL, to perform aninitialization operation of initializing the voltage of the driving gateelectrode G1 of the driving thin film transistor T1 by transmitting theinitialization voltage Vint to the driving gate electrode G1 of thedriving thin film transistor T1.

An operation control gate electrode G5 of the operation control thinfilm transistor T5 may be connected to the emission control line EL, anoperation control source electrode S5 of the operation control thin filmtransistor T5 may be connected to the driving voltage line PL, and anoperation control drain electrode D5 of the operation control thin filmtransistor T5 may be connected to the driving source electrode S1 of thedriving thin film transistor T1 and the switching drain electrode D2 ofthe switching thin film transistor T2.

An emission control gate electrode G6 of the emission control thin filmtransistor T6 may be connected to the emission control line EL, anemission control source electrode S6 of the emission control thin filmtransistor T6 may be connected to the driving drain electrode D1 of thedriving thin film transistor T1 and the compensation source electrode S3of the compensation thin film transistor T3, and an emission controldrain electrode D6 of the emission control thin film transistor T6 maybe electrically connected to a second initialization source electrode S7of the second initialization thin film transistor T7 and the pixelelectrode of the organic light-emitting diode OLED.

The operation control thin film transistor T5 and the emission controlthin film transistor T6 may be simultaneously (or concurrently) turnedon according to the emission control signal EM received through theemission control line EL, such that the driving voltage ELVDD may betransmitted to the organic light-emitting diode OLED and thus thedriving current IDLED may flow through the organic light-emitting diodeOLED.

A second initialization gate electrode G7 of the second initializationthin film transistor T7 may be connected to the previous scan line SIL,the second initialization source electrode S7 of the secondinitialization thin film transistor T7 may be connected to the emissioncontrol drain electrode D6 of the emission control thin film transistorT6 and the pixel electrode of the organic light-emitting diode OLED, andthe second initialization drain electrode D7 of the secondinitialization thin film transistor T7 may be connected to the firstinitialization source electrode S4 of the first initialization thin filmtransistor T4 and the initialization voltage line VL. The secondinitialization thin film transistor T7 may be turned on according to theprevious scan signal Sn−1 received through the previous scan line SIL,to initialize the pixel electrode of the organic light-emitting diodeOLED.

Although FIG. 2B illustrates a case where the first initialization thinfilm transistor T4 and the second initialization thin film transistor T7are connected to the previous scan line SIL, the present disclosure isnot limited thereto. In other embodiments, the first initialization thinfilm transistor T4 may be connected to the previous scan line SIL to bedriven according to the previous scan signal Sn−1, and the secondinitialization thin film transistor T7 may be connected to a separatesignal line (e.g., a subsequent scan line) to be driven according to asignal transmitted to the separate signal line.

A second storage capacitor plate CE2 of the storage capacitor Cst may beconnected to the driving voltage line PL, and the opposite electrode ofthe organic light-emitting diode OLED may be connected to the commonvoltage ELVSS. Accordingly, the organic light-emitting diode OLED mayreceive the driving current IDLED from the driving thin film transistorT1 to emit light to display an image.

Although FIG. 2B illustrates that the compensation thin film transistorT3 and the first initialization thin film transistor T4 have dual gateelectrodes, the compensation thin film transistor T3 and the firstinitialization thin film transistor T4 may each have one gate electrode.

FIG. 3 is a planar layout diagram of a pixel circuit according to thepresent embodiments.

Referring to FIG. 3 , the driving thin film transistor T1, the switchingthin film transistor T2, the compensation thin film transistor T3, thefirst initialization thin film transistor T4, the operation control thinfilm transistor T5, and the emission control thin film transistor T6,and the second initialization thin film transistor T7 may be arrangedalong a semiconductor layer 1130. The semiconductor layer 1130 may bearranged on a substrate where a buffer layer of an inorganic insulatingmaterial is formed.

Some areas of the semiconductor layer 1130 may correspond tosemiconductor layers of the driving thin film transistor T1, theswitching thin film transistor T2, the compensation thin film transistorT3, the first initialization thin film transistor T4, the operationcontrol thin film transistor T5, the emission control thin filmtransistor T6, and the second initialization thin film transistor T7.For example, the semiconductor layers of the driving thin filmtransistor T1, the switching thin film transistor T2, the compensationthin film transistor T3, the first initialization thin film transistorT4, the operation control thin film transistor T5, the emission controlthin film transistor T6, and the second initialization thin filmtransistor T7 may be connected to each other and may be bent in varioussuitable shapes.

The semiconductor layer 1130 may include a channel area, and a sourcearea and a drain area on and/or at both sides of the channel area, andthe source area and the drain area may be understood as the sourceelectrode and the drain electrode of the corresponding thin filmtransistor. Hereinafter, for convenience, the source area and the drainarea will be respectively referred to as a source electrode and a drainelectrode.

The driving thin film transistor T1 may include a driving gate electrodeG1 overlapping a driving channel area, and a driving source electrode S1and a driving drain electrode D1 on and/or at both sides of the drivingchannel area. The driving channel area overlapping the driving gateelectrode G1 may have a bent shape, such as an omega shape, to form along channel length in a narrow space. When the driving channel area islong, the driving range of a gate voltage may become wider, and thus thegradation of light emitted from the organic light-emitting diode OLEDmay be more finely controlled and the display quality thereof may beimproved.

The switching thin film transistor T2 may include a switching gateelectrode G2 overlapping a switching channel area, and a switchingsource electrode S2 and a switching drain electrode D2 on and/or at bothsides of the switching channel area. The switching drain electrode D2may be connected to the driving source electrode S1.

The compensation thin film transistor T3 may be a dual thin filmtransistor, may include compensation gate electrodes G3 overlapping twocompensation channel areas, and may include a compensation sourceelectrode S3 and a compensation drain electrode D3 arranged on and/or atboth sides thereof. The compensation thin film transistor T3 may beconnected to the driving gate electrode G1 of the driving thin filmtransistor T1 through a node connection line 1174 which will bedescribed in more detail below.

The first initialization thin film transistor T4 may be a dual thin filmtransistor, may include a first initialization gate electrode G4overlapping two first initialization channel areas, and may include afirst initialization source electrode S4 and a first initializationdrain electrode D4 arranged on and/or at both sides thereof.

The operation control thin film transistor T5 may include an operationcontrol gate electrode G5 overlapping an operation control channel area,and an operation control source electrode S5 and an operation controldrain electrode D5 located on and/or at both sides thereof. Theoperation control drain electrode D5 may be connected to the drivingsource electrode S1.

The emission control thin film transistor T6 may include an emissioncontrol gate electrode G6 overlapping an emission control channel area,and an emission control source electrode S6 and an emission controldrain electrode D6 located on and/or at both sides thereof. The emissioncontrol source electrode S6 may be connected to the driving drainelectrode D1.

The second initialization thin film transistor T7 may include a secondinitialization gate electrode G7 overlapping a second initializationchannel area, and a second initialization source electrode S7 and asecond initialization drain electrode D7 located on and/or at both sidesthereof.

The thin film transistors described above may be connected to the signallines SL, SIL, EL, and DL, the initialization voltage line VL, and thedriving voltage line PL.

The scan line SL, the previous scan line SIL, the emission control lineEL, and the driving gate electrode G1 may be arranged over thesemiconductor layer 1130, with one or more insulating layerstherebetween.

The scan line SL may extend along a first direction (e.g., firstdirection X). Areas of the scan line SL may correspond to the switchingand compensation gate electrodes G2 and G3. For example, the areas ofthe scan line SL overlapping the channel areas of the switching andcompensation thin film transistors T2 and T3 may respectively be (orcorrespond to) the switching and compensation gate electrodes G2 and G3.

The previous scan line SIL may extend along the first direction, andsome areas thereof may respectively correspond to the first and secondinitialization gate electrodes G4 and G7. For example, the areas of theprevious scan line SIL overlapping the channel areas of the first andsecond initialization thin film transistors T4 and T7 may respectivelybe (or correspond to) the first and second initialization gateelectrodes G4 and G7.

The emission control line EL may extend along the first direction. Areasof the emission control line EL may respectively correspond to theoperation control and emission control gate electrodes G5 and G6. Forexample, the areas of the emission control line EL overlapping thechannel areas of the operation control and emission control thin filmtransistors T5 and T6 may respectively be (or correspond to) theoperation control and emission control gate electrodes G5 and G6.

The driving gate electrode G1 may be a floating electrode and may beconnected to the compensation thin film transistor T3 through the nodeconnection line 1174 described above.

An electrode voltage line HL may be arranged over the scan line SL, theprevious scan line SIL, the emission control line EL, and the drivinggate electrode G1 with one or more insulating layers therebetween.

The electrode voltage line HL may extend along the first direction tointersect or cross the data line DL and the driving voltage line PL. Aportion of the electrode voltage line HL may cover at least a portion ofthe driving gate electrode G1, and may form the storage capacitor Cstwith the driving gate electrode G1. For example, the driving gateelectrode G1 may become the first storage capacitor plate CE1 of thestorage capacitor Cst and a portion of the electrode voltage line HL maybecome the second storage capacitor plate CE2 of the storage capacitorCst.

The second storage capacitor plate CE2 of the storage capacitor Cst maybe electrically connected to the driving voltage line PL. In thisregard, the electrode voltage line HL may be connected through a contacthole CNT to the driving voltage line PL arranged on the electrodevoltage line HL. Thus, the electrode voltage line HL may have the samevoltage level (e.g., constant voltage) as the driving voltage line PL.For example, the electrode voltage line HL may have a constant voltageof +5 V. The electrode voltage line HL may be understood as a horizontaldriving voltage line.

Because the driving voltage line PL extends along a second direction Y,and the electrode voltage line HL electrically connected to the drivingvoltage line PL extends along the first direction X intersecting orcrossing the second direction Y, a plurality of driving voltage lines PLand a plurality of electrode voltage lines HL may form a mesh structurein a display area.

The data line DL, the driving voltage line PL, an initializationconnection line 1173, and the node connection line 1174 may be arrangedover the electrode voltage line HL with one or more insulating layerstherebetween.

The data line DL may extend in the second direction (e.g., seconddirection Y) and may be connected to the switching source electrode S2of the switching thin film transistor T2 through a contact hole 1154. Aportion of the data line DL may be understood as (e.g., may correspondto) a switching source electrode.

The driving voltage line PL may extend in the second direction Y and maybe connected to the electrode voltage line HL through the contact holeCNT as described above. Also, it may be connected to the operationcontrol thin film transistor T5 through a contact hole 1155. The drivingvoltage line PL may be connected to the operation control drainelectrode D5 through the contact hole 1155.

One end of the initialization connection line 1173 may be connected tothe first and second initialization thin film transistors T4 and T7through a contact hole 1152, and the other end thereof may be connectedto the initialization voltage line VL through a contact hole 1151, whichwill be described in more detail below.

One end of the node connection line 1174 may be connected to thecompensation drain electrode D3 through a contact hole 1156, and theother end thereof may be connected to the driving gate electrode G1through a contact hole 1157.

The initialization voltage line VL may be arranged over the data lineDL, the driving voltage line PL, the initialization connection line1173, and the node connection line 1174 with one or more insulatinglayers therebetween.

The initialization voltage line VL may extend in the first direction.The initialization voltage line VL may be connected to the first andsecond initialization thin film transistors T4 and T7 through theinitialization connection line 1173. The initialization voltage line VLmay have a constant voltage (e.g., −2 V).

The initialization voltage line VL may include the same material and maybe arranged in the same layer as the second storage capacitor plate CE2,for example, the electrode voltage line HL. In the display area DA, thepixel electrode of the organic light-emitting diode OLED may beconnected to the emission control thin film transistor T6. The pixelelectrode may be connected to a connection metal 1175 through a contacthole 1163, and the connection metal 1175 may be connected to theemission control drain electrode D6 through a contact hole 1153.

Meanwhile, in FIG. 3 , the source electrode and the drain electrode ofthe thin film transistors may be changed with each other according tothe characteristics of the thin film transistors.

FIG. 4 is a plan view schematically illustrating arrangements of some ofthe components around the transmission area TA as an embodiment. FIG. 5Ais a plan view illustrating the relationship between the first sealingmember 510 and a metal layer ML among the components around thetransmission area TA. FIG. 5B is an enlarged view of a region III ofFIG. 4 . FIG. 6 is a schematic cross-sectional view of the display paneltaken along a line II-II′ of FIG. 4 .

First, referring to FIG. 4 , various lines may be arranged around thetransmission area TA. FIG. 4 illustrates portions of the scan line SL,the data line DL, the driving voltage line PL, and the electrode voltageline HL around the transmission area TA. In the drawings, some linesconnected to the pixel are omitted in the illustration.

The scan lines SL and the electrode voltage lines HL may extend alongthe first direction X and may be arranged to bypass along the edge ofthe transmission area TA in the first non-display area NDA1.

For example, in the first non-display area NDA1, the scan lines SL maybypass around the transmission area TA. In some embodiments, the scanlines SL and the electrode voltage lines HL may extend along the firstdirection X and may be bent and arranged along the edge of the firstthrough hole 110H.

For example, some scan lines SL may be curved along the upper edge ofthe transmission area TA, and other scan lines SL may be curved alongthe lower edge of the transmission area TA. The pixels P located on theleft and right sides of the transmission area TA may be electricallyconnected to the scan lines SL bypassing the transmission area TA.

In the first non-display area NDA1, the electrode voltage lines HL maybypass around the transmission area TA. For example, some electrodevoltage lines HL may be curved along the upper edge of the transmissionarea TA, and other electrode voltage lines HL may be curved along thelower edge of the transmission area TA. The pixels P located on the leftand right sides of the transmission area TA may be electricallyconnected to the electrode voltage lines HL bypassing the transmissionarea TA.

The data lines DL may extend along the second direction Y and may bearranged to bypass along the edge of the transmission area TA in thefirst non-display area NDA1. For example, some data lines DL may becurved along the left edge of the transmission area TA, and other datalines DL may be curved along the right edge of the transmission area TA.The pixels P located on the upper and lower sides of the transmissionarea TA may be electrically connected to the data lines DL bypassing thetransmission area TA.

In some embodiments, driving voltage lines PLa and PLb around thetransmission area TA may be disconnected on the transmission area TA.For example, the first driving voltage line PLa and the second drivingvoltage line PLb arranged on the same line along the second direction Ymay be spaced apart from each other with the transmission area TAtherebetween. The driving voltage line PL not passing through thetransmission area TA may be continuously arranged in the display areaDA.

The driving voltage lines PLa, PLb, and PL and the electrode voltagelines HL may be connected to each pixel P through the contact hole CNT.Because the driving voltage lines PLa, PLb, and PL extend along thesecond direction, and the electrode voltage line HL electricallyconnected to the driving voltage lines PLa, PLb, and PL extend along thefirst direction intersecting or crossing the second direction, aplurality of driving voltage lines PLa, PLb, and PL and a plurality ofelectrode voltage lines HL may thus form a mesh structure. Accordingly,even when the driving voltage lines PLa and PLb around the transmissionarea TA are disconnected without bypassing (e.g., passing through) thetransmission area TA, the driving voltage ELVDD may be substantiallyuniformly applied to a plurality of pixels P.

The electrode voltage line HL may extend from the second storagecapacitor plate CE2 of the storage capacitor Cst as described withreference to FIG. 3 .

In some embodiments, the lines bypassing (e.g., passing through) theperiphery of the transmission area TA may be integrated with the linesarranged in the display area DA. In other embodiments, the linesbypassing the periphery of the transmission area TA may be provided asconnection lines arranged in the same layer as, or in different layersthan, the lines arranged in the display area DA.

Referring to FIGS. 4 to 6 , in the present embodiment, the first sealingmember 510 may be arranged to surround the transmission area TA, and themetal layer ML may be arranged under the first sealing member 510. Thefirst sealing member 510 and the metal layer ML may be arranged tosurround the transmission area TA and may have a ring shape or a donutshape. The shape of the first sealing member 510 and the metal layer MLmay be modified according to the shape of the transmission area TA. Forexample, when the transmission area TA is elliptical, the first sealingmember 510 and the metal layer ML may also each be provided as anelliptical ring.

As described with reference to FIG. 1B, as the width of the firstsealing member 510 is small, the bonding force by the first sealingmember 510 may be weak.

In the present embodiment, the sealing property of the first sealingmember 510 may be improved by introducing the metal layer ML under thefirst sealing member 510.

The metal layer ML may be formed of a material having a high bondingforce with the first sealing member 510 to improve the sealing propertyby the first sealing member 510. Also, when the first sealing member 510is cured by a laser, the metal layer ML may function to assist thecuring by transmitting heat to the first sealing member 510 by absorbingand/or reflecting laser light.

The inner edge of the metal layer ML (facing the transmission area TA)may be covered by the first sealing member 510. For example, an innerdiameter d1 of the metal layer ML may be greater than an inner diameterd2 of the first sealing member 510 (d1>d2).

This may be to prevent or reduce the likelihood of the metal layer MLbeing exposed to the transmission area TA. When a portion of the inneredge of the metal layer ML is exposed without being covered by the firstsealing member 510, it may be corroded by moisture and/or the like thatmay flow from the transmission area TA. In the present embodiment, theinner edge of the metal layer ML may be covered by the first sealingmember 510 to prevent or reduce the corrosion of the metal layer ML.

An outer diameter od1 of the metal layer ML may be substantially thesame as an outer diameter od2 of the first sealing member 510 (od1=od2).

This may be to reduce the area of the first non-display area NDA1 andalso to efficiently (or suitably) cure the first sealing member 510.When the outer diameter od1 of the metal layer ML is greater than theouter diameter od2 of the first sealing member 510, the area of the areaNDA1 may be relatively large when considering the lines arranged in thefirst non-display area NDA1. On the other hand, when the outer diameterod1 of the metal layer ML is smaller than the outer diameter od2 of thefirst sealing member 510, the heat energy transmitted to the firstsealing member 510 by the metal layer ML may be reduced. In the presentembodiment, the outer diameter od1 of the metal layer ML may besubstantially the same as the outer diameter od2 of the first sealingmember 510 to minimize or reduce the first non-display area NDA1 andalso to efficiently (or suitably) cure the first sealing member 510.

In some embodiments, the metal layer ML may be for bonding to the firstsealing member 510 and may be arranged only under the first sealingmember 510, and a width W1 of the metal layer ML may be lower than awidth W2 of the first sealing member 510 (W1<W2).

In some embodiments, a metal layer may also be arranged under the secondsealing member 520.

Referring to FIGS. 4 and 5B, the metal layer ML may be electricallyconnected to a bypass line bypassing the transmission area TA. Incontrast, when the metal layer ML is electrically floated, electrostaticcharges may be collected in the metal layer ML, from which damage due toelectrostatic discharge may occur.

However, in the present embodiment, a phenomenon caused by theelectrostatic discharge may be prevented or reduced by electricallyconnecting the metal layer ML to at least one bypass line. The bypassline may be a line of the electrode voltage line HL adjacent to themetal layer ML. Accordingly, the metal layer ML may receive the drivingvoltage ELVDD, that is a constant voltage.

The bypass line and the metal layer ML may be connected by a connectionportion CP. The connection portion CP may be a conductive layerextending from the bypass line to the center of the transmission areaTA.

In some embodiments, the connection portion CP may protrude from theelectrode voltage line HL, which is the bypass line, toward the centerof the transmission area TA and extend to the metal layer ML. Forexample, the connection portion CP may be integrally formed with theelectrode voltage line HL. The connection portion CP may overlap themetal layer ML, and the metal layer ML may be connected to theconnection portion CP through a contact hole CNT′.

The connection portion CP may be provided in plurality and may bearranged along the edge of the metal layer ML. Also, the bypass lineconnected to the metal layer ML may be provided in plurality. Forexample, the metal layer ML may be connected to a line arranged mostadjacent to the metal layer ML among the electrode voltage lines HLbypassing along the upper side of the transmission area TA and to a linearranged most adjacent to the metal layer ML among the electrode voltagelines HL bypassing along the lower side of the transmission area TA.

In other embodiments, each connection portion CP may be arranged in adifferent layer than the electrode voltage line HL and the metal layerML, and connected to the electrode voltage line HL and the metal layerML by a contact hole.

Referring to FIG. 6 , the electronic element 20 may be arranged tocorrespond to the transmission area TA of the display panel.

The electronic element 20 may be located in the transmission area TA. Insome embodiments, as illustrated in the drawings, the electronic element20 may be arranged to be at least partially inserted into the firstthrough hole 110H of the first substrate 110. In other embodiments, theelectronic element 20 may be arranged under the first substrate 110 tocorrespond to the transmission area TA.

The electronic element 20 may include an electronic element using lightand/or sound. For example, the electronic element may include a sensorsuch as an infrared sensor for receiving and using light, a camera forreceiving light to capture an image, a sensor for outputting anddetecting light and/or sound to measure a distance and/or recognize afingerprint and/or the like, a miniature lamp for outputting light,and/or a speaker for outputting sound. In the case of an electronicelement using light, it may use light of various wavelength bands suchas visible light, infrared light, and/or ultraviolet light.

The display panel according to the present embodiment may include: afirst substrate 110 including a transmission area TA, a display area DAwhere display elements are arranged, and a first non-display area NDA1;a second substrate 310 facing the first substrate 110; a first sealingmember 510 between the first substrate 110 and the second substrate 310around the transmission area TA; and a metal layer ML under the firstsealing member 510. The metal layer ML may be electrically connected toat least one bypass line bypassing the transmission area TA.

The first substrate 110 and the second substrate 310 may eachindependently include a glass material or include a polymer resin. Forexample, the first substrate 110 may include a glass material havingSiO₂ as a main component, or may include a resin such as reinforcedplastic. The second substrate 310 may be arranged to face the firstsubstrate 110 to cover the display elements.

At least one thin film transistor TFT, a storage capacitor Cst, and anorganic light-emitting diode OLED as a display element may be arrangedin the display area DA of the first substrate 110.

The thin film transistor TFT may include a semiconductor layer Act, agate electrode G, a source electrode S, and a drain electrode D. Thestorage capacitor Cst may include a first storage capacitor plate CE1and a second storage capacitor plate CE2. The organic light-emittingdiode OLED may include a pixel electrode 210, an intermediate layer 220including an organic emission layer, and an opposite electrode 230.

Hereinafter, the configurations thereof will be described in thestacking order.

A buffer layer 111 may be arranged on the first substrate 110 to reduceor block the penetration of foreign materials, moisture, and/or outsideair from under the first substrate 110, and to provide a flat surface onthe first substrate 110. The buffer layer 111 may include an inorganicmaterial such as oxide and/or nitride, an organic material, or anorganic/inorganic composite, and may include a single-layer or amulti-layer structure of an inorganic material and an organic material.

A barrier layer may be further included between the first substrate 110and the buffer layer 111. The barrier layer may function to prevent orminimize (or reduce) the penetration of impurities from the firstsubstrate 110 and/or the like into the semiconductor layer Act. Thebarrier layer may include an inorganic material such as oxide and/ornitride, an organic material, or an organic/inorganic composite, and mayinclude a single-layer or a multi-layer structure of an inorganicmaterial and an organic material.

The semiconductor layer Act may be arranged on the buffer layer 111. Thesemiconductor layer Act may include amorphous silicon or may includepolysilicon. In other embodiments, the semiconductor layer Act mayinclude an oxide of at least one selected from indium (In), gallium(Ga), stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium(Cd), and germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al),cesium (Cs), cerium (Ce), and zinc (Zn). In some embodiments, thesemiconductor layer Act may include a Zn oxide-based material such as aZn oxide, an In—Zn oxide, and/or a Ga—In—Zn oxide. In other embodiments,the semiconductor layer Act may include IGZO (In—Ga—Zn—O), ITZO(In—Sn—Zn—O), and/or IGTZO (In—Ga—Sn—Zn—O) semiconductor containing ametal such as indium (In), gallium (Ga), and/or tin (Sn) in ZnO. Thesemiconductor layer Act may include a channel area, and a source areaand a drain area arranged on and/or at both sides of the channel area.The semiconductor layer Act may include a single layer or multiplelayers.

Over the semiconductor layer Act, the gate electrode G may be arrangedto at least partially overlap the semiconductor layer Act with a firstgate insulating layer 112 therebetween. The gate electrode G may includemolybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and/or thelike, and may include a single layer or multiple layers. For example,the gate electrode G may include a single layer of Mo.

The first gate insulating layer 112 may include silicon oxide (SiO₂),silicon nitride (SiN_(x)), silicon oxynitride (SiON), aluminum oxide(Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide(HfO₂), and/or zinc oxide (ZnO₂).

A second gate insulating layer 113 may be provided to cover the gateelectrode G. The second gate insulating layer 113 may include siliconoxide (SiO₂), silicon nitride (SiN_(x)), silicon oxynitride (SiON),aluminum oxide (Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅),hafnium oxide (HfO₂), and/or zinc oxide (ZnO₂).

The first storage capacitor plate CE1 of the storage capacitor Cst mayoverlap the thin film transistor TFT. For example, the gate electrode Gof the thin film transistor TFT may function as the first storagecapacitor plate CE1 of the storage capacitor Cst.

The second storage capacitor plate CE2 of the storage capacitor Cst mayoverlap the first storage capacitor plate CE1 with the second gateinsulating layer 113 therebetween. In this case, the second gateinsulating layer 113 may function as a dielectric layer of the storagecapacitor Cst. The second storage capacitor plate CE2 may include aconductive material including molybdenum (Mo), aluminum (Al), copper(Cu), titanium (Ti), and/or the like, and may include a single layer ormultiple layers including any of the above materials. For example, thesecond storage capacitor plate CE2 may include a single layer of Mo or amultilayer structure of Mo/Al/Mo.

In the drawings, the storage capacitor Cst is illustrated as overlappingthe thin film transistor TFT, however, in other embodiments, as one ofvarious modifications, the storage capacitor Cst may be arranged not tooverlap the thin film transistor TFT.

An interlayer insulating layer 115 may be provided to cover the secondstorage capacitor plate CE2 of the storage capacitor Cst. The interlayerinsulating layer 115 may include silicon oxide (SiO₂), silicon nitride(SiN_(x)), silicon oxynitride (SiON), aluminum oxide (Al₂O₃), titaniumoxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂), and/or zincoxide (ZnO₂).

The source electrode S and the drain electrode D may be arranged on theinterlayer insulating layer 115. The source electrode S and the drainelectrode D may include a conductive material including molybdenum (Mo),aluminum (Al), copper (Cu), titanium (Ti), and/or the like, and mayinclude a single layer or multiple layers including any of the abovematerials. For example, the source electrode S and the drain electrode Dmay include a multilayer structure of Ti/Al/Ti.

A via layer 117 may be located on the source electrode S and the drainelectrode D, and the organic light-emitting diode OLED may be located onthe via layer 117.

The via layer 117 may have a flat upper surface such that the pixelelectrode 210 may be formed flat. In some embodiments, the via layer 117may include a single layer or multiple layers formed of an organicmaterial. The via layer 117 may include a general-purpose polymer suchas benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO),polymethylmethacrylate (PMMA), and/or polystylene (PS), a polymerderivative having a phenolic group, an acrylic polymer, an imide-basedpolymer, an arylether-based polymer, an amide-based polymer, afluorine-based polymers, a p-xylene-based polymer, a vinyl alcohol-basedpolymer, or any blend thereof.

In some embodiments, the via layer 117 may include an inorganicmaterial. The via layer 117 may include silicon oxide (SiO₂), siliconnitride (SiN_(x)), silicon oxynitride (SiON), aluminum oxide (Al₂O₃),titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂),and/or zinc oxide (ZnO₂). When the via layer 117 includes an inorganicmaterial, chemical planarization polishing may be performed in somecases. In some embodiments, the via layer 117 may include both anorganic material and an inorganic material.

In the display area DA of the first substrate 110, the organiclight-emitting diode OLED may be arranged on the via layer 117. Theorganic light-emitting diode OLED may include a pixel electrode 210, anintermediate layer 220 including an organic emission layer, and anopposite electrode 230.

The pixel electrode 210 may be a (semi)transparent electrode or areflective electrode. In some embodiments, the pixel electrode 210 mayinclude a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir,Cr, or any compound thereof, and a transparent or semitransparentelectrode layer formed on the reflective layer. The transparent orsemitransparent electrode layer may include at least one selected fromindium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO),indium oxide (In₂O₃), indium gallium oxide (IGO), and aluminum zincoxide (AZO). In some embodiments, the pixel electrode 210 may include astack structure of ITO/Ag/ITO.

A pixel definition layer 119 may be arranged on the via layer 117, andthe pixel definition layer 119 may have an opening portion correspondingto each pixel electrode 210 in the display area DA, for example, anopening portion OP for exposing at least a center portion of the pixelelectrode 210, to define an emission area of the pixel. Also, the pixeldefinition layer 119 may increase the distance between the edge of thepixel electrode 210 and the opposite electrode 230 over the pixelelectrode 210, to prevent or reduce an arc and/or the like fromoccurring at the edge of the pixel electrode 210. The pixel definitionlayer 119 may be formed of an organic insulating material such aspolyimide, polyamide, acrylic resin, benzocyclobutene,hexamethyldisiloxane (HMDSO), and/or phenol resin by spin coating and/orthe like.

The intermediate layer 220 of the organic light-emitting diode OLED mayinclude an organic emission layer. The organic emission layer mayinclude an organic material including a fluorescent or phosphorescentmaterial emitting red, green, blue, or white light. The organic emissionlayer may include a low-molecular organic material or a high-molecularorganic material, and functional layers such as a hole transport layer(HTL), a hole injection layer (HIL), an electron transport layer (ETL),and/or an electron injection layer (EIL) may optionally be furtherarranged under and/or over the organic emission layer. In someembodiments, the intermediate layer 220 may be arranged corresponding toeach of a plurality of pixel electrodes 210. In other embodiments, theintermediate layer 220 may include an integral (common) layer integratedover a plurality of pixel electrodes 210. For example, the organicemission layer may be arranged corresponding to each of a plurality ofpixel electrodes 210, and the functional layers arranged over and/orunder the organic emission layer may be integrally provided over aplurality of pixels. In other embodiments, the intermediate layer 220may be integrally provided over a plurality of pixel electrodes 210.

The opposite electrode 230 may be a transparent electrode or areflective electrode. In some embodiments, the opposite electrode 230may be a transparent or semitransparent electrode and may be formed of athin metal layer having a low work function and including Li, Ca,LiF/Ca, LiF/Al, Al, Ag, Mg, or any compound or mixture thereof. In someembodiments, a transparent conductive oxide (TCO) layer such as ITO,IZO, ZnO, and/or In₂O₃ may be further arranged on the thin metal layer.The opposite electrode 230 may be arranged over the display area DA anda peripheral area PA, and may be arranged on the intermediate layer 220and the pixel definition layer 119. The opposite electrode 230 may beintegrally formed in a plurality of organic light-emitting diodes OLEDto correspond to a plurality of pixel electrodes 210.

A capping layer for improving light extraction efficiency and/or aprotective layer formed of LiF and/or the like to protect the organiclight-emitting diode OLED from a subsequent process may be furtherarranged on the opposite electrode 230.

A bypass line portion DWL, the first sealing member 510, and the metallayer ML may be arranged in the first non-display area NDA1 of the firstsubstrate 110. The first sealing member 510 and the metal layer ML maybe arranged more adjacent (e.g., closer) to the transmission area TAthan the bypass line portion DWL.

The bypass line portion DWL may include a scan line SL, an electrodevoltage line HL, and a data line DL. In some embodiments, the bypassline portion DWL may further include an emission control line, aprevious scan line, and/or the like.

The scan line SL may be arranged on the first gate insulating layer 112,that is, in the same layer as the gate electrode G. The electrodevoltage line HL may be arranged on the second gate insulating layer 113,that is, in the same layer as the second storage capacitor plate CE2.The data line DL may be arranged on the interlayer insulating layer 115,that is, in the same layer as the source electrode S and/or the drainelectrode D.

The metal layer ML may be arranged in the same layer as the data line DLand may be spaced apart from the data line DL. The metal layer ML may bearranged on the interlayer insulating layer 115. The metal layer ML mayinclude a conductive material including molybdenum (Mo), aluminum (Al),copper (Cu), titanium (Ti), and/or the like, and may include a singlelayer or multiple layers including any of the above materials.

The metal layer ML may be arranged more adjacent (e.g., closer) to thetransmission area TA than the bypass line portion DWL. The metal layerML may be connected to the connection portion CP through the contacthole CNT passing through the second gate insulating layer 113. Theconnection portion CP may extend from the electrode voltage line HL. Asthe metal layer ML is connected to the electrode voltage line HL, damagedue to electrostatic discharge may be prevented or reduced.

The first sealing member 510 may be arranged to cover the metal layer MLon the interlayer insulating layer 115. The first sealing member 510 maybe arranged between the first substrate 110 and the second substrate 310to seal the first substrate 110 and the second substrate 310 to preventor reduce oxygen, moisture, and/or the like from flowing into thedisplay area DA.

The first sealing member 510 may include a material that is cured bylaser light. The first sealing member 510 may include a frit.

The first sealing member 510 may have a stronger bonding force with themetal layer ML including a metal material than with the interlayerinsulating layer 115 including an inorganic insulating material. In thepresent embodiment, the sealing by the first sealing member 510 may bemore efficiently performed by introducing the metal layer ML between theinterlayer insulating layer 115 and the first sealing member 510.

The first substrate 110 may include a first through hole 110Hcorresponding to the transmission area TA. As the first substrate 110includes the first through hole 110H, the light and/or sound output fromthe electronic element 20 and/or received by the electronic element 20may be more effectively (suitably) used.

When the buffer layer 111, the first gate insulating layer 112, thesecond gate insulating layer 113, and the interlayer insulating layer115 are referred to as an inorganic insulating layer IL, the inorganicinsulating layer IL may include a first hole H1 corresponding to thetransmission area TA. The size of the first hole H1 may be larger thanthe size of the first through hole 110H.

The via layer 117 may include a second hole H2 corresponding to thetransmission area TA. The second hole H2 may be provided to expose themetal layer ML. For example, the metal layer ML and the first sealingmember 510 may be arranged inside the second hole H2.

The pixel definition layer 119 may include a third hole H3 correspondingto the transmission area TA. The third hole H3 may be provided to exposethe metal layer ML. For example, the metal layer ML and the firstsealing member 510 may be arranged inside the third hole H3.

The opposite electrode 230 may include a fourth hole H4 corresponding tothe transmission area TA. The fourth hole H4 may be provided to exposethe metal layer ML. The edge of the fourth hole H4 may be spaced apartfrom the metal layer ML. Accordingly, an electrical short may not occurbetween the opposite electrode 230 and the metal layer ML.

The second substrate 310 may include a second through hole 310Hcorresponding to the transmission area TA. The first through hole 110Hof the first substrate 110 and the second through hole 310H of thesecond substrate 310 may be simultaneously (or concurrently) formed byusing a laser, after bonding the first substrate 110 and the secondsubstrate 310 by the sealing member 500 (see FIG. 1 ). Accordingly, thesize of the second through hole 310H may be substantially the same asthe size of the first through hole 110H.

FIG. 7 is a schematic plan view illustrating the shape of a metal layeraccording to some embodiments.

Referring to FIG. 7 , the metal layer ML may include a plurality ofthrough holes CH. The shape and number of through holes CH may bevariously suitably modified. For example, the through holes CH may havea polygonal shape, a circular shape, an elliptical shape, and/or anirregular shape in a plan view. As the through holes CH are formed inthe metal layer ML, the first sealing member 510 may be arranged insidethe through holes CH to enable three-dimensional coupling. Accordingly,the bonding force between the first sealing member 510 and the metallayer ML may be enhanced.

FIG. 8 is a cross-sectional view schematically illustrating a displaypanel according to some embodiments. In FIG. 8 , like reference numeralsas in FIG. 6 denote like members, and redundant descriptions thereofwill not be provided for conciseness.

Referring to FIG. 8 , the display panel may include: a first substrate110 including a transmission area TA, a display area DA where displayelements are arranged, and a first non-display area NDA1; a secondsubstrate 310 arranged to face the first substrate 110; a first sealingmember 510 arranged between the first substrate 110 and the secondsubstrate 310 around the transmission area TA; and a metal layer MLarranged under the first sealing member 510. In some embodiments, themetal layer ML may be electrically connected to at least one bypass linebypassing the transmission area TA.

In the present embodiment, a touchscreen layer 700, including touchelectrodes 710 of various patterns for a touchscreen function, may beprovided on the second substrate 310. The touch electrode 710 may beprovided as a transparent electrode material, such that the light fromthe emission area of pixels arranged under the touchscreen layer 700 maybe transmitted therethrough. In some embodiments, the touch electrode710 may be provided in a mesh shape, such that the light from theemission area of the pixels may be transmitted therethrough. In thiscase, the touch electrode 710 is not limited to a transparent electrodematerial. For example, the touch electrode 710 may include a singlelayer or multiple layers formed of a conductive material includingaluminum (A1), copper (Cu), and/or titanium (Ti).

The touch electrode 710 may include a first touch conductive layer 711and a second touch conductive layer 713. The touchscreen layer 700according to an embodiment may have a structure in which the first touchconductive layer 711, a first insulating layer 712, the second touchconductive layer 713, and a second insulating layer 714 are sequentiallystacked.

In some embodiments, the second touch conductive layer 713 may functionas a sensor portion for sensing contact, and the first touch conductivelayer 711 may function as a connection portion for connecting thepatterned second touch conductive layer 713 in one direction.

In some embodiments, both the first touch conductive layer 711 and thesecond touch conductive layer 713 may function as a sensor portion. Forexample, the first insulating layer 712 may include a via hole forexposing the top surface of the first touch conductive layer 711, andthe first touch conductive layer 711 and the second touch conductivelayer 713 may be connected through the via hole. As such, as the firsttouch conductive layer 711 and the second touch conductive layer 713 areused, the resistance of the touch electrode 710 may be reduced and thusthe response speed of the touchscreen layer 700 may be improved.

In some embodiments, the touch electrode 710 may be formed in a meshstructure to allow the light emitted from the organic light-emittingdiode OLED to pass therethrough. Accordingly, the first touch conductivelayer 711 and the second touch conductive layer 713 of the touchelectrode 710 may be arranged not to overlap the emission area of theorganic light-emitting diode OLED.

Each of the first touch conductive layer 711 and the second touchconductive layer 713 may include a single layer or multiple layersformed of a conductive material with good conductivity. For example,each of the first touch conductive layer 711 and the second touchconductive layer 713 may include a transparent conductive layer, or asingle layer or a multilayer formed of a conductive material includingaluminum (Al), copper (Cu), and/or titanium (Ti). The transparentconductive layer may include a transparent conductive oxide such asindium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO),and/or indium tin zinc oxide (ITZO). In some embodiments, thetransparent conductive layer may include a conductive polymer such asPEDOT, metal nanowire, graphene, and/or the like. In some embodiments,each of the first touch conductive layer 711 and the second touchconductive layer 713 may have a stack structure of Ti/Al/Ti.

Each of the first insulating layer 712 and the second insulating layer714 may include an inorganic material or an organic material. Theinorganic material may include at least one selected from siliconnitride, aluminum nitride, zirconium nitride, titanium nitride, hafniumnitride, tantalum nitride, silicon oxide, aluminum oxide, titaniumoxide, tin oxide, cerium oxide, and silicon oxynitride. The organicmaterial may include at least one selected from acrylic resin,polyisoprene, vinyl-based resin, epoxy-based resin, urethane-basedresin, cellulose-based resin, and perylene-based resin.

In some embodiments, a touch buffer layer may be further providedbetween the second substrate 310 and the touchscreen layer 700. Thetouch buffer layer may function to block or reduce an interferencesignal that may occur when driving the touchscreen layer 700. The touchbuffer layer may include an inorganic material such as silicon oxide,silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride,titanium oxide, and/or titanium nitride, or an organic material such aspolyimide, polyester, and/or acryl, and may be formed of any stackthereof.

Because the touch buffer layer and/or the touchscreen layer 700 areformed directly on the second substrate 310 by deposition and/or thelike, a separate adhesive layer may not be required on the secondsubstrate 310. Thus, the thickness of the display panel may be reduced.

An optical functional section 800 and a window 900 may be arranged onthe touchscreen layer 700. The window 900 may be coupled to a componentthereunder, for example, the optical functional section 800, through anadhesive layer such as an optical clear adhesive (OCA).

The optical functional section 800 may include an anti-reflection layer.The anti-reflection layer may reduce the reflectance of light (externallight) incident from the outside through the window 900 toward thedisplay panel. The anti-reflection layer may include a phase retarderand a polarizer. The phase retarder may be a film or a liquid crystalcoating and may include a/2 (half-wave) phase retarder and/or a/4(quarter-wave) phase retarder. The polarizer may also be a film or aliquid crystal coating. The film may include a stretched synthetic resinfilm, and the liquid crystal coating may include liquid crystalsarranged in a certain arrangement. The phase retarder and the polarizermay each independently further include a protective film.

In other embodiments, the anti-reflection layer may include a structureof color filters and a black matrix. The color filters may be arrangedin consideration of the color of light emitted from each of the pixelsof the display panel. In other embodiments, the anti-reflection layermay include a destructive interference structure. The destructiveinterference structure may include a first reflective layer and a secondreflective layer arranged on different layers. The first reflected lightand the second reflected light respectively reflected by the firstreflective layer and the second reflective layer may destructivelyinterfere with each other, and accordingly the external lightreflectance may be reduced.

The optical functional section 800 may include a lens layer. The lenslayer may improve the light emission efficiency of light emitted fromthe display panel and/or may reduce color deviation. The lens layer mayinclude a layer having a concave or convex lens shape and/or may includea plurality of layers having different refractive indexes. The opticalfunctional section 800 may include both the anti-reflection layer andthe lens layer described above or may include any one of them.

The touchscreen layer 700 and the optical functional section 800 mayinclude a hole corresponding to the transmission area TA.

The window 900 may be arranged over the optical functional section 800to protect the components arranged thereunder. The window 900 mayinclude a transparent glass material, a polymer resin, and/or the like.When an adhesive layer between the window 900 and the optical functionalsection 800 may include an optical clear adhesive (OCA), the adhesivelayer may not include a hole corresponding to the transmission area TA.

FIG. 9 is a cross-sectional view schematically illustrating a displaypanel according to some embodiments. In FIG. 9 , like reference numeralsas in FIG. 6 denote like members, and redundant descriptions thereofwill not be provided for conciseness.

Referring to FIG. 9 , the display panel may include: a first substrate110 including a transmission area TA, a display area DA where displayelements are arranged, and a first non-display area NDA1; a secondsubstrate 310 arranged to face the first substrate 110; a first sealingmember 510 arranged between the first substrate 110 and the secondsubstrate 310 around the transmission area TA; and a metal layer MLarranged under the first sealing member 510. In some embodiments, themetal layer ML may be electrically connected to at least one bypass linebypassing the transmission area TA.

In the present embodiment, the first substrate 110 may be continuouslyarranged corresponding to the transmission area TA and may not include athrough hole. In this case, an electronic element 20 may be arrangedunder the first substrate 110.

In some embodiments, the second substrate 310 may be continuouslyarranged corresponding to the transmission area TA and may not include athrough hole. In this case, the first sealing member 510 may function tosupport the first substrate 110 and the second substrate 310.

As one of various possible modifications, only one of the firstsubstrate 110 and the second substrate 310 may include a through holecorresponding to the transmission area TA.

As described above, according to the embodiments of the presentdisclosure, because the metal layer connected to the bypass line isarranged under the sealing member, the bonding of the sealing member maybe enhanced and also the display panel may be protected from staticelectricity. However, these effects are merely examples and the scope ofthe present disclosure is not limited thereto.

As used herein, the terms “use,” “using,” and “used” may be consideredsynonymous with the terms “utilize,” “utilizing,” and “utilized,”respectively.

In addition, the terms “substantially,” “about,” and similar terms areused as terms of approximation and not as terms of degree, and areintended to account for the inherent deviations in measured orcalculated values that would be recognized by those of ordinary skill inthe art.

Also, any numerical range recited herein is intended to include allsub-ranges of the same numerical precision subsumed within the recitedrange. For example, a range of “1.0 to 10.0” is intended to include allsubranges between (and including) the recited minimum value of 1.0 andthe recited maximum value of 10.0, that is, having a minimum value equalto or greater than 1.0 and a maximum value equal to or less than 10.0,such as, for example, 2.4 to 7.6. Any maximum numerical limitationrecited herein is intended to include all lower numerical limitationssubsumed therein and any minimum numerical limitation recited in thisspecification is intended to include all higher numerical limitationssubsumed therein. Accordingly, Applicant reserves the right to amendthis specification, including the claims, to expressly recite anysub-range subsumed within the ranges expressly recited herein

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope of thepresent disclosure as defined by the following claims and theirequivalents.

What is claimed is:
 1. A display panel comprising: a first substratecomprising a transmission area, a display area at least partiallysurrounding the transmission area, and a first non-display area betweenthe transmission area and the display area; display elements in thedisplay area; a first bypass line in the first non-display area, todetour the transmission area; a second substrate facing the firstsubstrate; a sealing member joining the first substrate to the secondsubstrate and surrounding a periphery of the transmission area; and ametal layer in the first non-display area and being more adjacent to thetransmission area than the first bypass line, wherein the metal layer isin a different layer than the first bypass line and is electricallyconnected to the first bypass line.
 2. The display panel of claim 1,further comprising a second bypass line in the first non-display area,to detour the transmission area, wherein the second bypass line is in asame layer as the metal layer.
 3. The display panel of claim 2, whereinthe first bypass line and the second bypass line cross each other. 4.The display panel of claim 1, wherein the first bypass line comprises aconnection portion protruding toward a center of the transmission area,and the metal layer is connected to the connection portion through acontact hole.
 5. The display panel of claim 4, wherein the connectionportion is a plurality of connection portions.
 6. The display panel ofclaim 1, wherein the first bypass line is a portion of an electrodevoltage line to provide a driving voltage to the display area.
 7. Thedisplay panel of claim 1, wherein the first bypass line extends from anelectrode of a storage capacitor in the display area.
 8. The displaypanel of claim 1, wherein the metal layer and the sealing membersurround the transmission area in a ring shape, and an inner diameter ofthe sealing member is smaller than an inner diameter of the metal layer.9. The display panel of claim 1, wherein the metal layer and the sealingmember surround the transmission area in a ring shape, and an outerdiameter of the sealing member is equal to an outer diameter of themetal layer.
 10. The display panel of claim 1, further comprising atouchscreen layer over the second substrate, wherein the touchscreenlayer comprises a hole corresponding to the transmission area.
 11. Adisplay panel comprising: a first substrate comprising a first throughhole; display elements on the first substrate and at least partiallysurrounding the first through hole; a first bypass line bent andextending along an edge of the first through hole; a second substratefacing the first substrate; a first sealing member joining the firstsubstrate to the second substrate and surrounding a periphery of thefirst through hole; and a metal layer under the first sealing member, tosurround the first through hole, wherein the metal layer is in adifferent layer than the first bypass line and is electrically connectedto the first bypass line.
 12. The display panel of claim 11, furthercomprising a storage capacitor over the first substrate, the storagecapacitor comprising a first storage capacitor plate and a secondstorage capacitor plate over the first storage capacitor plate, whereinthe first bypass line is in a same layer as the second storage capacitorplate.
 13. The display panel of claim 12, wherein the second storagecapacitor plate is connected to a driving voltage line through a contacthole, and the metal layer is in a same layer as the driving voltageline.
 14. The display panel of claim 11, further comprising a firstdriving voltage line and a second driving voltage line over the firstsubstrate, the first and second driving voltage lines being spaced apartfrom each other with the first through hole therebetween.
 15. Thedisplay panel of claim 11, wherein a width of the first sealing memberis greater than a width of the metal layer.
 16. The display panel ofclaim 11, further comprising a second sealing member joining the firstsubstrate to the second substrate and surrounding an edge of the firstsubstrate, wherein a width of the second sealing member is greater thana width of the first sealing member.
 17. The display panel of claim 11,wherein the second substrate comprises a second through holecorresponding to the first through hole.
 18. The display panel of claim11, wherein the first bypass line comprises a connection portionprotruding toward a center of a transmission area, and the metal layeris connected to the connection portion through a contact hole.
 19. Thedisplay panel of claim 18, wherein the connection portion is a pluralityof connection portions.
 20. The display panel of claim 11, wherein themetal layer comprises a plurality of through holes.